參數(shù)資料
型號: MMPQ2369
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 4 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: CASE 751B, SOP-16
文件頁數(shù): 2/4頁
文件大?。?/td> 144K
代理商: MMPQ2369
MMPQ2369
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
hFE
40
20
CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
0.25
Vdc
Base Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
0.9
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
450
550
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cob
2.5
4.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
3.0
5.0
pF
SWITCHING CHARACTERISTICS
TurnOn Time
(VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc, IC = 10 mAdc,
IB1 = 3.0 mAdc)
ton
9.0
ns
TurnOff Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)
toff
15
ns
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
相關(guān)PDF資料
PDF描述
MMPQ2369R2 4 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MMPQ2369 4 CHANNEL, Si, RF SMALL SIGNAL TRANSISTOR
MMPQ3906 200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MMPQ3799 200 mA, 60 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MMPQ3904 200 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMPQ2369 WAF 制造商:ON Semiconductor 功能描述:
MMPQ2369R WAF 制造商:ON Semiconductor 功能描述:
MMPQ2369R2 功能描述:兩極晶體管 - BJT 500mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMPQ2907 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMPQ2907_Q 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2