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參數(shù)資料
| 型號： | MMPQ2369 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Switching Transistor(NPN開關(guān)晶體管) |
| 中文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOIC-16 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 198K |
| 代理商： | MMPQ2369 |
P
PN2369A
MMPQ2369
MMBT2369A
NPN Switching Transistor
This device is designed for high speed saturation switching at collector
currents of 10 mA to 100 mA. Sourced from Process 21.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
15
40
4.5
200
V
V
V
mA
°
C
-55 to +150
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN2369A
350
2.8
125
357
MMBT2369A*
225
1.8
MMPQ2369
1,000
8.0
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
°
C/W
°
C/W
R
θ
JC
R
θ
JA
Effective 4 Die
Each Die
556
125
240
CBE
TO-92
C
B
E
SOT-23
Mark: 1S
C
CCCCCCC
SOIC-16
EB
EBEBEB
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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| MMPQ2369 WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ2369R WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ2369R2 | 功能描述:兩極晶體管 - BJT 500mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ2907 | 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ2907_Q | 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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