參數(shù)資料
型號： MMPQ2222L86Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： 1000 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： SOIC-16
文件頁數(shù)： 2/6頁
文件大?。?/td> 113K
代理商： MMPQ2222L86Z
PN2222A
/
MMBT2222A
/
MMPQ2222
/
NMT2222
/
PZT2222A
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
(except MMPQ2222 and NMT2222)
fT
Current Gain - Bandwidth Product
IC = 20 mA, VCE = 20 V, f = 100 MHz
300
MHz
Cobo
Output Capacitance
VCB = 10 V, IE = 0, f = 100 kHz
8.0
pF
Cibo
Input Capacitance
VEB = 0.5 V, IC = 0, f = 100 kHz
25
pF
rb’CC
Collector Base Time Constant
IC = 20 mA, VCB = 20 V, f = 31.8 MHz
150
pS
NF
Noise Figure
IC = 100
A, V
CE = 10 V,
RS = 1.0 k
, f = 1.0 kHz
4.0
dB
Re(hie)
Real Part of Common-Emitter
High Frequency Input Impedance
IC = 20 mA, VCE = 20 V, f = 300 MHz
60
SWITCHING CHARACTERISTICS
(except MMPQ2222 and NMT2222)
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
Spice Model
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 10 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
75
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
6.0
V
ICEX
Collector Cutoff Current
VCE = 60 V, VEB(OFF) = 3.0 V
10
nA
ICBO
Collector Cutoff Current
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0, TA = 150
°C
0.01
10
A
IEBO
Emitter Cutoff Current
VEB = 3.0 V, IC = 0
10
nA
IBL
Base Cutoff Current
VCE = 60 V, VEB(OFF) = 3.0 V
20
nA
hFE
DC Current Gain
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V, TA = -55
°C
IC = 150 mA, VCE = 10 V*
IC = 150 mA, VCE = 1.0 V*
IC = 500 mA, VCE = 10 V*
35
50
75
35
100
50
40
300
VCE(sat)
Collector-Emitter Saturation
Voltage*
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.3
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage*
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.6
1.2
2.0
V
td
Delay Time
VCC = 30 V, VBE(OFF) = 0.5 V,
10
ns
tr
Rise Time
IC = 150 mA, IB1 = 15 mA
25
ns
ts
Storage Time
VCC = 30 V, IC = 150 mA,
225
ns
tf
Fall Time
IB1 = IB2 = 15 mA
60
ns
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
NPN General Purpose Amplifier
(continued)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMPQ2369 功能描述:兩極晶體管 - BJT 500mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMPQ2369 WAF 制造商:ON Semiconductor 功能描述:
MMPQ2369R WAF 制造商:ON Semiconductor 功能描述:
MMPQ2369R2 功能描述:兩極晶體管 - BJT 500mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMPQ2907 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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