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參數(shù)資料
| 型號： | MMPQ2222AR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 751B-05, SOP-16 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 180K |
| 代理商： | MMPQ2222AR2 |
MMPQ2222A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
Vdc
CollectorBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
75
Vdc
EmitterBase Breakdown Voltage
(IB = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
ICBO
50
10
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
100
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 100 mA, VCE = 10 V)
(IC = 1.0 mA, VCE = 10 V)
(IC = 10 mA, VCE = 10 V)
(IC = 150 mA, VCE = 10 V)
(IC = 500 mA, VCE = 10 V)
(IC = 150 mA, VCE = 1.0 V)
hFE
35
50
75
100
40
50
300
CollectorEmitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.3
1.0
Vdc
Base Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
1.2
2.0
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (Note 1)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
200
350
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
4.5
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
17
pF
SWITCHING CHARACTERISTICS
TurnOn Time
(VCC = 30 Vdc, VBE(off) = 0.5 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc)
ton
25
ns
TurnOff Time
(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc)
toff
250
ns
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMPQ2369 | 功能描述:兩極晶體管 - BJT 500mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ2369 WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ2369R WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ2369R2 | 功能描述:兩極晶體管 - BJT 500mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ2907 | 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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