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參數(shù)資料
| 型號： | MMJT9410 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Bipolar Power Transistors |
| 中文描述： | 3 A, 30 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 95K |
| 代理商： | MMJT9410 |
1
Motorola Bipolar Power Transistor Device Data
NPN Silicon
Collector –Emitter Sustaining Voltage — VCEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain — hFE
= 85 (Min) @ IC = 1.0 Adc
= 60 (Min) @ IC = 3.0 Adc
Low Collector –Emitter Saturation Voltage — VCE(sat)
= 0.2 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 5.0 Adc
SOT–223 Surface Mount Packaging
Preferred devices
are Motorola recommended choices for future use and best overall value.
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Symbol
Value
Unit
30
45
Vdc
Vdc
VCB
Base Current — Continuous
IB
1.0
Adc
Collector Current
—
Peak
Total PD @ TA = 25 C mounted on 0.92” sq. (590 sq. mm) Drain pad on FR–4 bd material
Total PD @ TA = 25 C mounted on 0.012” sq. (7.6 sq. mm) Drain pad on FR–4 bd material
1.5
0.8
5.0
Derate above 25 C
3.0
0.025
Watts
mW/ C
THERMAL CHARACTERISTICS
Operating and Storage Junction Temperature Range
TJ, Tstg
–55 to +150
C
Characteristic
Symbol
Max
Unit
– Junction to Ambient on 0.012” sq. (7.6 sq. mm) Drain pad on FR–4 bd material
– Junction to Ambient on 1” sq. (645 sq. mm) Drain pad on FR–4 bd material
R
θ
JA
R
θ
JA
156
60
REV 1
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMJT9410/D
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.2 VOLTS
CASE 318E–04, Style 1
Motorola Preferred Device
Top View
Pinout
C
C
E
B
Schematic
C 2,4
B 1
E 3
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMJT9410G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Bipolar Power Transistors NPN Silicon |
| MMJT9410T1 | 功能描述:兩極晶體管 - BJT 3A 30V 3W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9410T1G | 功能描述:兩極晶體管 - BJT 3A 30V 3W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9435 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Bipolar Power Transistors PNP Silicon |
| MMJT9435T1 | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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