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參數(shù)資料
| 型號： | MMFTN138 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 110K |
| 代理商： | MMFTN138 |
MMFTN138
MMFTN138
N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
N-Kanal Logikpegel Feldeffekt-Transistor - Anreicherungstyp
N
Version 2011-01-24
Dimensions - Mae [mm]
1 = G
2 = S
3 = D
Power dissipation – Verlustleistung
360 mW
Plastic case
Kunststoffgehuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MMFTN138
Drain-Source-voltage – Drain-Source-Spannung
VDSS
50 V
Drain-Gate-voltage (RGS < 20 KΩ )
Drain-Gate-Spannung
VDGR
50 V
Gate-Source-voltage
Gate-Source-Spannung
dc
tP < 50 s
VGSS
± 20 V
± 40 V
Power dissipation – Verlustleistung
Ptot
360 mW
Drain current continuos – Drainstrom (dc)
ID
220 mA
Peak Drain current – Drain-Spitzenstrom
IDM
880 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
150°C
-55…+150°C
Diotec Semiconductor AG
http://www.diotec.com/
1
2.
5
m
ax
1.
3
±
0.
1
1.1
0.4
2.9 ±0.1
1
2
3
Type
Code
1.9
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