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參數(shù)資料
| 型號： | MMFT3055VT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 224K |
| 代理商： | MMFT3055VT1 |
MMFT3055V
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
0
1
2
3
4
5
0
1.5
2.5
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2
3
4
5
6
0
1.5
3
4
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
0.5
1
2.5
4
0
0.05
0.1
0.15
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
1
3.5
4
0.050
0.065
0.140
0.170
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.6
0.8
1.2
1.6
0
20
50
60
10
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
– 25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = – 55°C
25
°C
100
°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 0.85 A
5 V
4 V
3.5 V
4.5 V
0.5
1
2
2.5
3.5
4.5
5.5
0.5
2
3.5
VGS = 10 V
TJ = 100°C
25
°C
– 55
°C
2
3.5
0.5
2
2.5
10
30
40
0.025
0.075
0.125
0.080
0.155
0.095
1.0
1.4
TJ = 125°C
VGS = 10 V
15 V
175
6
7
8
9
10
2.5
1
3
1.5
0.175
0.2
0.125
1.5
3
0.110
0.4
0.2
0
1.8
2.0
100
°C
3
3.5
4
7 V
6 V
5.5 V
6.5
7
7.5
0.225
0.25
5
25
55
15
35
45
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|---|---|
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