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參數(shù)資料
| 型號： | MMFT3055VLT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 224K |
| 代理商： | MMFT3055VLT3 |
MMFT3055VL
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
65
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
—
10
100
Adc
Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(Cpk
≥ 2.0) (3)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
1.5
3.7
2.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0) (3)
(VGS = 5.0 Vdc, ID = 0.75 Adc)
RDS(on)
—
0.125
0.14
Ohm
Drain–to–Source On–Voltage
(VGS = 5.0 Vdc, ID = 1.5 Adc)
(VGS = 5.0 Vdc, ID = 0.75 Adc, TJ = 150°C)
VDS(on)
—
0.25
0.24
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 1.5 Adc)
gFS
1.0
3.5
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
350
490
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
110
150
Transfer Capacitance
f = 1.0 MHz)
Crss
—
29
60
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 30 Vdc, ID = 1.5 Adc,
VGS = 5.0 Vdc,
RG = 9.1 )
td(on)
—
9.5
20
ns
Rise Time
(VDD = 30 Vdc, ID = 1.5 Adc,
VGS = 5.0 Vdc,
RG = 9.1 )
tr
—
18
40
Turn–Off Delay Time
VGS = 5.0 Vdc,
RG = 9.1 )
td(off)
—
35
70
Fall Time
G = 9.1 )
tf
—
22
40
Gate Charge
(VDS = 48 Vdc, ID = 1.5 Adc,
VGS = 5.0 Vdc)
QT
—
9.0
10
nC
(VDS = 48 Vdc, ID = 1.5 Adc,
VGS = 5.0 Vdc)
Q1
—
1.0
—
(VDS = 48 Vdc, ID = 1.5 Adc,
VGS = 5.0 Vdc)
Q2
—
4.0
—
Q3
—
3.5
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 1.5 Adc, VGS = 0 Vdc)
(IS = 1.5 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
—
0.82
0.68
1.2
—
Vdc
Reverse Recovery Time
(IS = 1.5 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
trr
—
41
—
ns
(IS = 1.5 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
—
29
—
(IS = 1.5 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
—
12
—
Reverse Recovery Stored Charge
QRR
—
0.066
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
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