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參數(shù)資料
| 型號(hào)： | MMFT3055VLT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁(yè)數(shù)： | 8/10頁(yè) |
| 文件大小： | 219K |
| 代理商： | MMFT3055VLT1 |
MMFT3055VL
http://onsemi.com
7
INFORMATION FOR USING THE SOT223 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.079
2.0
0.15
3.8
0.248
6.3
0.079
2.0
0.059
1.5
0.059
1.5
0.059
1.5
0.091
2.3
0.091
2.3
mm
inches
SOT223 POWER DISSIPATION
The power dissipation of the SOT223 is a function of
the drain pad size. This can vary from the minimum pad
size for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT223 package, PD can be calculated as
follows:
PD =
TJ(max) TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 943 milliwatts.
PD =
175°C 25°C
159°C/W
= 943 milliwatts
The 159°C/W for the SOT223 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 943
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT223 package. One is to
increase the area of the drain pad. By increasing the area of
the drain pad, the power dissipation can be increased.
Although one can almost double the power dissipation with
this method, one will be giving up area on the printed
circuit board which can defeat the purpose of using surface
mount technology. A graph of RθJA versus drain pad area is
shown in Figure 17.
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| MMFT3055VLT3 | 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT3055VLT1 | 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT3055VT1G | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT3055VT1 | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT3055VT1 | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMFT3055VT1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
| MMFT3055VT3 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
| MMFT5P03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS |
| MMFT5P03HDT1 | 功能描述:MOSFET P-CH 30V 3.7A SOT223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MMFT5P03HDT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS P-CHANNEL FIELD FEECT TRANSISTOR |
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