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參數(shù)資料
| 型號： | MMFT2N25EG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 166K |
| 代理商： | MMFT2N25EG |
MMFT2N25E
http://onsemi.com
3
9.0 V
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation versus
Temperature
Figure 6. DraintoSource Leakage Current
versus Voltage
20
0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
3.0
2.5
2.0
1.5
1.0
VGS, GATETOSOURCE VOLTAGE (VOLTS)
6.0
7
3.0
2.0
1.0
0.5
0
3.0
4.0
0
ID, DRAIN CURRENT (AMPS)
7.0
4.0
3.0
2.0
1.0
0
ID, DRAIN CURRENT (AMPS)
1.0
0
6.0
4.0
3.0
2.0
1.0
0
1.5
25
50
TJ, JUNCTION TEMPERATURE (°C)
2.0
1.5
1.0
0.5
0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
50
0
100
10
1.0
100
0
I D
,DRAIN
CURRENT
(AMPS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0.5
0
10
5.0
15
TJ = 25°C
6.5
7.0
3.5
4.0
4.5
5.0
5.5
1.5
2.5
3.0
1.0
2.0
2.5
3.0
3.5
4
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
50
75
100
2.5
200
2
150
I DSS
,LEAKAGE
(nA)
4.0
3.5
I D
,DRAIN
CURRENT
(AMPS)
3.5
4.0
0.5
5.0
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
5.0
6.0
125
150
VGS = 10 V
5.0 V
6.0 V
7.0 V
8.0 V
VDS ≥ 10 V
55 °C
25°C
TJ = 100°C
VGS = 10 V
TJ = 100°C
55 °C
25°C
VGS = 10 V
15 V
TJ = 25°C
VGS = 0 V
100°C
TJ = 125°C
VGS = 10 V
ID = 1.0 A
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|---|---|
| MMFT2N25ET3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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