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參數(shù)資料
| 型號： | MMFT2955ET1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 203K |
| 代理商： | MMFT2955ET1 |
MMFT2955E
http://onsemi.com
4
Figure 8. Thermal Response
1.0
0.1
0.001
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
r(t),
EFFECTIVE
THERMAL
RESIST
ANCE
t, TIME (s)
0.1
0.01
0.2
0.02
0.01
D = 0.5
SINGLE PULSE
(NORMALIZED)
0.05
RqJA(t) = r(t) RqJA
RqJA = 156°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) RqJA(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0E+01
COMMUTATING SAFE OPERATING AREA (CSOA)
The Commutating Safe Operating Area (CSOA) of Figure 10 defines the limits of safe operation for commutated sourcedrain
current versus reapplied drain voltage when the sourcedrain diode has undergone forward bias. The curve shows the limitations
of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 9
are present. Full or halfbridge PWM DC motor controllers are common applications requiring CSOA data.
Device stresses increase with increasing rate of change of source current so dIS/dt is specified with a maximum value. Higher
values of dIS/dt require an appropriate derating of IFM, peak VDS or both. Ultimately dIS/dt is limited primarily by device,
package, and circuit impedances. Maximum device stress occurs during trr as the diode goes from conduction to reverse blocking.
VDS(pk) is the peak draintosource voltage that the device must sustain during commutation; IFM is the maximum forward
sourcedrain diode current just prior to the onset of commutation.
VR is specified at 80% rated BVDSS to ensure that the CSOA stress is maximized as IS decays from IRM to zero.
RGS should be minimized during commutation. TJ has only a second order effect on CSOA.
Stray inductances in ON Semiconductor’s test circuit are assumed to be practical minimums. dVDS/dt in excess of 10 V/ns was
attained with dIS/dt of 400 A/ms.
Figure 9. Commutating Waveforms
Figure 10. Commutating Safe Operating
Area (CSOA)
15 V
VGS
0
90%
IFM
dlS/dt
IS
10%
trr
tfrr
0.25 IRM
IRM
ton
VDS
Vf
VdsL
VR
VDS(pk)
MAX. CSOA
STRESS AREA
SI
,SOURCE
CURRENT
(AMPS)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
6
5
4
3
2
1
0
80
70
60
50
40
30
20
10
0
dIS/dt ≤ 400 A/ms
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| MMFT2955ET1G | 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
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| MMFT3055ET3 | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMFT3055ET1 | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMFT2N02EL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MEDIUM POWER LOGIC LEVEL TMOS FET 1.6 AMP 20 VOLTS |
| MMFT2N02ELT1 | 功能描述:MOSFET N-CH 20V 1.6A SOT223 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| MMFT2N25E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 250 VOLTS |
| MMFT2N25ET3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMFT3055E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS |
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