參數(shù)資料
型號(hào)： MMDT3906TB6T/R13
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-6
文件頁數(shù)： 2/4頁
文件大?。?/td> 129K
代理商： MMDT3906TB6T/R13
PAGE . 2
REV.0.0-FEB.6.2009
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ELECTRICAL CHARACTERISTICS
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
27 5
W
10K
W
0
-0 .5 V
300 ns
-10.9V
+3 V
D elay and R ise Tim e Equiva lent Test C ircuit
<1ns
C * < 4pF
S
S torag e and F all Tim e E q uivalent Test C ircu it
0
+9 .1 V
10 to 500 us
Duty Cycle ~ 2.0%
- 1 0.9V
< 1ns
0
1N 916
+3V
27 5
W
10K
W
C * < 4pF
S
SWITCHING TIME EQUIVALENT TEST CIRCUITS
相關(guān)PDF資料
PDF描述
MMDT3906TB6T/R7 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MMDT3906V 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MMDT3906 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDT3906-TP 功能描述:兩極晶體管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT3906V 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3906V_11 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Plastic-Encapsulate Transistors
MMDT3906V-7 功能描述:兩極晶體管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT3906V-7-F 制造商:Diodes Incorporated 功能描述:TRANS GP BJT PNP 40V 0.2A 6PIN SOT-563 - Tape and Reel
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