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參數(shù)資料
| 型號： | MMDT3904 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 107K |
| 代理商： | MMDT3904 |
MMDT3904
Plastic-Encapsulate
Transistors
Features
ElectricalCharacteristics@25
°C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
40
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10Adc, IE=0)
60
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10Adc, IC=0)
5.0
Vdc
IEBO
Emitter Cutoff Current
(VEB=5Vdc, IC=0)
50
nAdc
ICEO
Collector Cutoff Current
(VCE=30Vdc, IB=0)
50
nAdc
ICBO
Collect Cutoff Current
(VCB=30Vdc, IE=0)
50
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=10mAdc, VCE=1.0Vdc)
(IC=50mAdc, VCE=1.0Vdc)
100
60
300
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=50mAdc, IB=5.0mAdc)
0.3
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=50mAdc, IB=5.0mAdc)
0.95
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz)
300
MHz
Cobo
Output Capacitance
(VCB=5.0Vdec, IE=0, f=1.0MHz)
4.0
pF
SWITCHING CHARACTERISTICS
td
Delay Time
(VCC=3.0Vdc, VBE=0.5Vdc
35
ns
tr
Rise Time
IC=10mAdc, IB1=1.0mAdc)
35
ns
ts
Storage Time
(VCC=3.0Vdc, IC=10mAdc
200
ns
tf
Fall Time
IB1=IB2=1.0mAdc)
50
ns
J
M
A
C
B
G
H
K
D
L
omponents
20736 Marilla Street Chatsworth
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M C C
Revision: 6
2009/02/24
Collector-Current:IC=0.2A
Epitaxial planar die construction
TM
Micro Commercial Components
200mW
www.mccsemi.com
1 of 2
Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
DIM
MIN
MAX
MIN
MAX
NOTE
A
.006
.014
0.15
0.35
B
.045
.053
1.15
1.35
C
.085
.096
2.15
2.45
D
.026
0.65Nominal
G
.047
.055
1.20
1.40
H
.071
.087
1.80
2.20
J
---
.004
---
0.10
K
.035
.043
0.90
1.10
L
.010
.018
0.26
0.46
M
.003
.006
0.08
0.15
Maximum Ratings
Symbol
Rating
Unit
PC
Power dissipation
(1)
200
mW
RTHJA
Thermal Resistance
625
OC/W
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Note: 1. Valid provided that terminals are kept at ambient temperature.
SOT-363
INCHES
MM
DIMENSIONS
Marking: K6N
Ideal for low power amplification and switching
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDT3904_06 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR |
| MMDT3904_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT3904_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:200mW Plastic-Encapsulate Transistors |
| MMDT3904_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT3904-7 | 功能描述:兩極晶體管 - BJT 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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