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參數(shù)資料
| 型號(hào)： | MMDJ3P03BJT |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 30 V, 2 CHANNEL, PNP, Si, POWER TRANSISTOR |
| 封裝： | MINIATURE, PLASTIC, CASE 751-07, SOIC-8 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 204K |
| 代理商： | MMDJ3P03BJT |
MMDJ3P03BJT
http://onsemi.com
2
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorBase Voltage
VCB
45
Vdc
CollectorEmitter Voltage
VCEO
30
Vdc
EmitterBase Voltage
VEB
± 6.0
Vdc
Collector Current — Continuous
Collector Current — Peak
IC
3.0
5.0
Adc
Base Current — Continuous
IB
1.0
Adc
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction to Ambient on 1″ sq. (645 sq. mm)
Collector pad on FR4 board material with one die operating.
Thermal Resistance Junction to Ambient on 0.012″ sq. (7.6 sq. mm)
Collector pad on FR4 board material with one die operating.
RθJA
100
185
_C/W
Total Power Dissipation @ TA = 25_C mounted on 1″ sq. (645 sq. mm)
Collector pad on FR4 board material with one die operating.
Derate above 25_C
PD
1.25
10
Watts
mW/_C
Maximum Temperature for Soldering
TL
260
_C
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