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參數(shù)資料
| 型號： | MMDFS2P102 |
| 廠商： | Motorola, Inc. |
| 英文描述： | P-Channel Power MOSFET with Schottky Rectifier 20 Volts |
| 中文描述： | P溝道功率MOSFET，肖特基整流器20伏特 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 248K |
| 代理商： | MMDFS2P102 |
1
Motorola, Inc. 1997
MOSFET and Schottky Rectifier
The FETKY
product family incorporates low RDS(on), true logic level MOSFETs
packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers
to offer high efficiency components in a space saving configuration. Independent pinouts
for TMOS and Schottky die allow the flexibility to use a single component for switching
and rectification functions in a wide variety of applications such as Buck Converter,
Buck–Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Manage-
ment in Battery Packs, Chargers, Cell Phones and other Portable Products.
HDTMOS Power MOSFET with Low VF, Low IR Schottky Rectifier
Lower Component Placement and Inventory Costs along with
Board Space Savings
Logic Level Gate Drive — Can be Driven by Logic ICs
Mounting Information for SO–8 Package Provided
IDSS Specified at Elevated Temperature
Applications Information Provided
MOSFET MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted) (1)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
ID
ID
IDM
20
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M )
Gate–to–Source Voltage — Continuous
Drain Current (3)— Continuous @ TA = 25
°
C
— Continuous @ TA = 100
°
C
— Single Pulse (tp
20
Vdc
20
Vdc
10 s)
3.3
2.1
20
Adc
Apk
Total Power Dissipation @ TA = 25
°
C (2)
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25
°
C
VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25
PD
EAS
2.0
Watts
324
mJ
SCHOTTKY RECTIFIER MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRRM
VR
20
Volts
Average Forward Current (3) (Rated VR) TA = 100
°
C
Peak Repetitive Forward Current (3) (Rated VR, Square Wave, 20 kHz) TA = 105
°
C
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
IO
Ifrm
Ifsm
1.0
Amps
2.0
Amps
20
Amps
DEVICE MARKING
ORDERING INFORMATION
2P102
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
2500 units
MMDFS2P102R2
(1) Negative sign for P–channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
250
μ
s, Duty Cycle
≤
2.0%.
(3) Mounted on 2
″
square FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided), 10 sec. max.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
HDTMOS and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
FETKY is a trademark of International Rectifier.
Order this document
by MMDFS2P102/D
SEMICONDUCTOR TECHNICAL DATA
P–Channel Power MOSFET
with Schottky Rectifier
20 Volts
RDS(on) = 0.16
VF = 0.39 Volts
CASE 751–05, Style 18
(SO–8)
1
2
3
4
8
7
6
5
A
A
S
G
C
C
D
D
TOP VIEW
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