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參數(shù)資料
| 型號： | MMDF2P03HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 30 V, 0.22 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 290K |
| 代理商： | MMDF2P03HDR2 |
MMDF2P03HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.2
0.4
0.6
0.8
2
0
2
3
4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
1.5
1.7
1.9
2.1
2.3
3.7
0
2
3
4
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
1
2
3
4
10
0
0.1
0.3
0.4
0.6
0
0.5
1
1.5
2
4
0.10
0.15
0.20
0.25
0.30
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
10
20
30
10
100
1000
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
TJ = 100°C
25
°C
– 55
°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 1 A
TJ = 25°C
VGS = 4.5 V
1
1.2
4.5 V
3.7 V
3.1 V
2.5
1
1.4
1.6
1.8
1
2.7
2.9
3.1
3.3
3.5
0.2
5
6
7
8
9
2.5
3
3.5
10 V
TJ = 125°C
100
°C
0.5
2.9 V
2.7 V
2.5 V
3.3 V
3.5 V
3.9 V
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
TJ, JUNCTION TEMPERATURE (°C)
– 50
0
50
100
150
0.6
VGS = 10 V
ID = 2 A
1.4
(NORMALIZED)
– 25
25
75
125
0.8
1.6
1.2
1.0
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