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參數(shù)資料
| 型號： | MMDF2P02HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3300 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 257K |
| 代理商： | MMDF2P02HDR2 |
MMDF2P02HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
2
4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
2
4
10
0.6
0.04
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage Current
versus Voltage
VDS ≥ 10 V
100
°C
25
°C
TJ = – 55°C
0.4
6
8
– 50
0
50
100
150
3
1
2
4
3
1.0
1.5
2.0
3.5
0.2
0.20
0.08
0
1.0
2.0
3.0
4.0
0.6
10
0
5
10
15
VGS = 10 V
ID = 2 A
1.4
20
0
0.16
0.12
2.5
3.0
ID = 1 A
TJ = 25°C
0.5
1.5
2.5
3.5
10 V
VGS = 4.5 V
(NORMALIZED)
– 25
25
75
125
0.8
1.6
1.2
VGS = 0 V
I DSS
,LEAKAGE
(nA)
TJ = 125°C
100
°C
1.0
3.7 V
3.1 V
2.7 V
2.9 V
3.3 V
3.5 V
4.5 V
3.9 V
TJ = 25°C
2.5 V
VGS = 10 V
0
0.2
0.4
0.6
0.8
1.4
1
1.2
1.6
1.8
2
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| MMDF2P02HDR2G | 功能描述:MOSFET PFET SO8D 20V 3.3A 160mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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