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參數資料
| 型號： | MMBZ6.8VDA-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 118K |
| 代理商： | MMBZ6.8VDA-GS08 |
VISHAY
MMBZ...VDA and C Series
Document Number 85808
Rev. 1.2, 30-Jan-04
Vishay Semiconductors
www.vishay.com
1
12
3
12
3
Common Cathode
Common Anode
MMBZ15VDC
MMBZ27VDC
MMBZ15VDA
MMBZ27VDA
18654
Dual Zener Transient Voltage Suppressor Diodes for ESD
Protection
Features
Dual Silicon Planar Zener Diodes with Common
Cathode or Common Anode configurations.
Dual package provides for Bidirectional or sepa-
rate unidirectional configurations.
The dual configurations protect two separate lines
with only one device.
Peak Power: 40 W @1 ms (Bidirectional) .
High temperature Soldering Guaranteed: 230 °C
for 10 seconds.
Ideal for ESD Protection.
For bidirectional operation, circuit connected to
pins 1 and 2. For unidirectional operation, circuit
connected to pins 1 and 3 or pins 2 and 3.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Terminals: Solderable per MIL-STD-750, method
2026
Packaging Codes/Options:
GS18/ 10 k per 13 " reel (8 mm tape), 10 k/box
GS08/ 3 k per 7 " reel (8 mm tape), 15 k/box
Marking:
MMBZ15VDC = TC5
MMBZ27VDC = TC7
MMBZ6V8DC = ?
MMBZ15VDA = TA5
MMBZ27VDA = TA7
MMBZ6V8DA = ?
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Nonrepetitive current pulse per Figure 2 and derate above T
amb = 25 °C per Figure 3.
2) FR-5 = 1.0 x 0.75 x 0.62 in.
3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5 % alumina.
4) The MMBZ6V8DC/A is rated at 24 V.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Peak power dissipation1)
PPK
404)
W
Power dissipation
on FR-5 Board2)
Tamb = 25 °C
Derate above 25 °C
Ptot
225
1.8
mW
mW/°C
Power dissipation
on Alumina Substrate3)
Tamb = 25 °C
Derate above 25 °C
Ptot
300
2.4
mW
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambiant air
RθJA
556
°C/W
Operating and storage temperature range
Tj, Tstg
- 55 to + 150
°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBZ6V2AL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 3V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 3V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 3V, SOT23; Reverse Stand-Off Voltage Vrwm:3V; Breakdown Voltage Min:5.89V; Breakdown Voltage Max:6.51V; Clamping Voltage Vc Max:8.7V; Peak Pulse Current Ippm:2.76A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes |
| MMBZ6V2AL,215 | 功能描述:ESD 抑制器 1Ch 8.7V 2.76A RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| MMBZ6V2AL-7-F | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 PROTECTION TVS BIDIR SOT-23 24W 3.0V RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| MMBZ6V2ALT1 | 功能描述:TVS二極管陣列 6.2V 225mW Dual RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ6V2ALT1G | 功能描述:TVS二極管陣列 6.2V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
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