參數(shù)資料
型號(hào)： MMBZ5251BLT1G
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： 500mA, Adjustable Output 1.2 to 37V, Voltage Regulator with ±2% tolerance, Ta = 0°C to +125°C; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500
中文描述： 22 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB
封裝： LEAD FREE, PLASTIC, CASE 318-08, TO-236, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 79K
代理商： MMBZ5251BLT1G
Part Number: MMBZ5221BW thru MMBZ5259BW
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ELECTRICAL CHARACTERISTICS (T
A
=25
O
C unless otherwise noted) V
F
=1.2V max, I
F
=100mA for all types.
NOTE:
1.Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2.Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3.Zener Voltage (V
Z
) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (T
L
) at 30
O
C, from the diode body.
4.Zener Impedance (Z
Z
) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
5.Surge Current (I
R
) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
wave pulse of 1/120 second duration superimposed on the test current, I
ZT
, per JEDEC registration; however, actual device capability is as described in Figure 5.
相關(guān)PDF資料
PDF描述
MMBZ5251BLT3 500mA, Adjustable Output 1.2 to 37V, Voltage Regulator with ±4% tolerance, Ta = -40°C to +125°C; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Rail; Qty per Container: 75
MMBZ5251BLT3G 500mA, Adjustable Output 1.2 to 37V, Voltage Regulator with ±4% tolerance, Ta = -40°C to +125°C; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Rail; Qty per Container: 75
MMBZ5257BLT1G 1.2V +-2% Output Voltage 10uA-20mA Voltage Reference Diode; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
MMBZ5257BLT3 1.2V +/-2% Output Voltage 10uA-20mA Voltage Reference Diode- Pb Free Device; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
MMBZ5257BLT3G 1.2V ±2% Output Voltage 10uA-20mA Voltage Reference Diode; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBZ5251BLTIG 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
MMBZ5251BS-7 功能描述:穩(wěn)壓二極管 200MW 22V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
MMBZ5251BS-7-F 功能描述:穩(wěn)壓二極管 200MW 22V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
MMBZ5251BT-7 功能描述:穩(wěn)壓二極管 150MW 22V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
MMBZ5251BT-7-F 功能描述:穩(wěn)壓二極管 150MW 22V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
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