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參數(shù)資料
| 型號： | MMBZ33VA |
| 廠商： | WEITRON INTERNATIONAL CO., LTD. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 中文描述： | 在250μA低電流操作，低反向漏，低噪聲穩(wěn)壓二極管（250μA工作電流，小反向漏電流，低噪聲，齊納二極管） |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 116K |
| 代理商： | MMBZ33VA |
WEITRON
http://www.weitron.com.tw
WEITRON
FIG.7 Maximum Non-repetitive Surge
Power, P Versus PW
P
P
P
PW, PULSE WIDTH(ms)
PW, PULSE WIDTH(ms)
Power is defined as V I (pk)where V is
the clamping voltage at I (pk).
Z
MMBZ5V6A Series
0.1
1
10
100
1000
1
10
100
x
Power is defined as V (NOM) I (pk)where V (NOM) is
the nominal Zener voltage measured at the low test current
used for voltage classification
Z
x
UNIDIRECTIONAL
RECTANGULAR
WA
VEFORM, T
A
= 25 C
BIDIRECTIONAL
0.1
1
10
100
1000
1
10
100
UNIDIRECTIONAL
RECT
ANGULAR
WA
VEFORM, T
A
= 25 C
BIDIRECTIONAL
FIG.8 Maximum Non-repetitive Surge
Power, P (NOM)Versus PW
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBZ5V6A | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| MMBZ6V2A | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| MMBZ6V8A | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| MMBZ9V1A | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| MMBZ5221BV | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ33VAL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS UN 40W 26V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 26V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, UN, 40W, 26V, SOT23, Reverse Stand-Off Voltage Vrwm:26V, Breakdown Voltage Min:31.35V, Breakdown Voltage Max:34.65V, Clamping Voltage Vc Max:46V, Peak Pulse Current Ippm:870mA, Diode Case Style:SOT-23, No. of Pins:3 , RoHS Compliant: Yes |
| MMBZ33VAL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 26V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| MMBZ33VAL/DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ33VAL215 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| MMBZ33VAL-7 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 33V 225mW RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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