參數(shù)資料
型號： MMBZ12VAL/DG
廠商： NXP SEMICONDUCTORS
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： TVS DIODE, TO-236AB
封裝： HALOGEN FREE, PLASTIC, SMD, 3 PIN
文件頁數(shù)： 15/15頁
文件大小： 78K
代理商： MMBZ12VAL/DG
MMBZXVAL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
9 of 15
NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
8.
Application information
The MMBZxVAL series is designed for the protection of up to two unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The devices provide a surge capability of 40 W per line for a 10/1000
s waveform.
Fig 7.
V-I characteristics for a unidirectional
ESD protection diode
Fig 8.
V-I characteristics for a bidirectional
ESD protection diode
006aab324
VCL VBR VRWM
IRM
IR
IPP
V
I
P-N
+
IPPM
006aab325
VCL VBR VRWM
VCL
VBR
VRWM
IRM
IR
IPP
+
IPPM
Fig 9.
Typical application: ESD and transient voltage protection of data lines
006aab326
MMBZxVAL
line 1 to be protected
unidirectional protection
of two lines
bidirectional protection
of one line
line 2 to be protected
GND
MMBZxVAL
line 1 to be protected
GND
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBZ12VALT1 功能描述:TVS二極管陣列 12V Dual Zener RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
MMBZ12VALT1G 功能描述:TVS二極管陣列 12V Dual Zener Common Anode RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
MMBZ12VALT3 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ12VALT3G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ12VDG 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression
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