參數(shù)資料
型號: MMBV3700LT1
廠商: 樂山無線電股份有限公司
英文描述: Silicon Pin Diode
中文描述: 硅PIN二極管
文件頁數(shù): 1/2頁
文件大小: 57K
代理商: MMBV3700LT1
LESHAN RADIO COMPANY, LTD.
I9–1/2
1
3
2
CASE 318–08, STYLE8
SOT– 23 (TO–236AB)
MMBV3700LT1
Silicon Pin Diode
These devices are designed primarily for VHF band switching appli-
cations but are also suitable for use in general–purpose switching
circuits. They are supplied in a cost–effective plastic package for
economical, high–volume consumer and industrial requirements. They
are also available in surface mount.
Long Reverse Recovery Time
t
rr
= 300 ns (Typ)
Rugged PIN Structure Coupled with Wirebond
Construction for Optimum Reliability
Low Series Resistance @ 100 MHz —
R
S
= 0.7 Ohms (Typ) @ I
F
= 10 mAdc
Reverse Breakdown Voltage = 200 V (Min)
SILICON PIN
SWITCHING DIODE
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Device Dissipation @T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBV3700LT1=4R
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=10
μ
Adc)
Diode Capacitance
(V
R
=20 Vdc,f=1.0MHz)
Series Resistance(figure5)
(I
F
=10mAdc)
Reverse Leakage Current
(V
R
=150Vdc)
Reverse Recovery Time
(I
F
=I
R
=10mAdc)
Symbol
V
R
P
D
MV21XX
MMBV21XXLT1
200
Unit
Vdc
mW
mW/°C
°C
°C
280
2.8
200
2.0
T
J
T
stg
+150
–55 to +150
Symbol
Min
Typ
Max
Unit
V
(BR)R
200
Vdc
C
T
1.0
pF
R
S
0.7
1.0
I
R
0.1
μ
Adc
t
rr
300
ns
3
CATHODE
1
ANODE
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