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參數(shù)資料
| 型號(hào)： | MMBV109LT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Silicon Epicap Diodes |
| 中文描述： | VHF BAND, 29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB |
| 封裝： | LEAD FREE, CASE 318-08, TO-236, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | MMBV109LT3G |
MMBV109LT1, MV209
http://onsemi.com
2
C
t
, Diode Capacitance
V
R
= 3.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
V
R
= 3.0 Vdc
f = 50 MHz
C
R
, Capacitance Ratio
C
3
/C
25
f = 1.0 MHz
(Note 1)
Device
Package
Shipping
Min
Nom
Max
Min
Min
Max
MMBV109LT1
SOT23
3,000 / Tape & Reel
26
29
32
200
5.0
6.5
MMBV109LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
MMBV109LT3
SOT23
10,000 / Tape & Reel
MMBV109LT3G
SOT23
(PbFree)
10,000 / Tape & Reel
MV209
TO92
1,000 Units / Bag
MV209G
TO92
(PbFree)
1,000 Units / Bag
1. C
R
is the ratio of C
t
measured at 3 Vdc divided by C
t
measured at 25 Vdc.
Figure 1. DIODE CAPACITANCE
40
32
24
16
8
01
3
10
30
100
V
R
, REVERSE VOLTAGE (VOLTS)
C
Figure 2. FIGURE OF MERIT
f, FREQUENCY (MHz)
Figure 3. LEAKAGE CURRENT
T
A
, AMBIENT TEMPERATURE
Figure 4. DIODE CAPACITANCE
T
A
, AMBIENT TEMPERATURE
Q
10
1000
100
10
100
1000
,
IR
100
60
60
0.01
0.006
0.001
0
+40
+100
C 1.04
75
1.02
1.00
0.98
0.96
25
+25
+75
+125
V
R
= 3.0 Vdc
f = 1.0 MHz
C
t
C
c
+ C
j
36
28
20
12
4
f = 1.0 MHz
T
A
= 25
°
C
V
R
= 3 Vdc
T
A
= 25
°
C
V
R
= 20 Vdc
+120 +140
+80
+60
+20
40
20
0.1
0.06
1.0
0.6
10
6.0
20
2.0
0.2
0.02
0.002
50
0
+50
+100
1.03
1.01
0.99
0.97
NOTES ON TESTING AND SPECIFICATIONS
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| MMBV2101LT1 | 功能描述:變?nèi)荻O管 30V 6.1pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類(lèi)型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
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