參數(shù)資料
型號: MMBV105GLT1G
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Silicon Tuning Diode
中文描述: UHF BAND, 2.15 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB
封裝: HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 54K
代理商: MMBV105GLT1G
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 4
1
Publication Order Number:
MMBV105GLT1/D
MMBV105GLT1
Preferred Device
Silicon Tuning Diode
This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solidstate
reliability in replacement of mechanical tuning methods.
Features
Controlled and Uniform Tuning Ratio
PbFree Package is Available
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
30
Vdc
Forward Current
I
F
200
mAdc
Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Junction Temperature
T
J
+125
°
C
Storage Temperature Range
T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
SOT23 (TO236)
CASE 318
STYLE 8
Device
Package
Shipping
ORDERING INFORMATION
MMBV105GLT1
SOT23
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBV105GLT1G
SOT23
(PbFree)
3,000 / Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3
Cathode
1
Anode
Preferred
devices are recommended choices for future use
and best overall value.
1
M4EM
M4E = Specific Device Code
M
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
1
2
3
MARKING DIAGRAM
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