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參數(shù)資料
| 型號： | MMBTH24L99Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MMBTH24L99Z |
NPN RF Transistor
This device is designed for common-emitter low noise
amplifier and mixer applications with collector currents
in the 100
A to 20 mA range to 300 MHz, and low
frequency drift common-base VHF oscillator applications
with high output levels for driving FET mixers. Sourced
from Process 47. See MPSH11 for characteristics.
MPSH24
MMBTH24
MPSH24
/
MMBTH24
C
B
E
TO-92
C
B
E
SOT-23
Mark: 3A
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector Current - Continuous
50
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
MPSH24
*MMBTH24
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
225
1.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
556
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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