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參數(shù)資料
| 型號： | MMBTA94G-AE3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 111K |
| 代理商： | MMBTA94G-AE3-R |
MMBTA94
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-008,E
ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-300
mA
Collector Dissipation (Ta=25
°C)
PC
350
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-40~+150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC =-100A,IE=0
-400
V
Collector-Emitter Breakdown Voltage
BVCEO
IC =-1mA,IB=0
-400
V
Collector-Emitter Breakdown Voltage
BVCES
IC =-100A,VBE=0
-400
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100A,Ic=0
-5
V
Collector Cut-off Current
ICBO
VCB=-300V,IE=0
-100
nA
Collector Cut-off Current
ICES
VCB=-400V,VBE=0
-1
A
Emitter Cut-off Current
IEBO
VEB=-4V,IC=0
100
nA
VCE=-10V,IC=-1mA
60
VCE=-10V,IC=-10mA
70
300
VCE=-10V,IC=-50mA
70
DC Current Gain (Note)
hFE
VCE=-10V,IC=-100mA
40
IC=-10mA,IB=-1mA
-0.20
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-50mA,IB=-5mA
-0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-10mA,IB=-1mA
-0.75
V
Output Capacitance
Cob
VCB=-20V,IE=0, f=1MHz
7
pF
Note: Pulse test: PW
<300s, Duty Cycle<2%
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