參數(shù)資料
型號(hào): MMBTA42E
廠商: 江蘇長(zhǎng)電科技股份有限公司
英文描述: TRANSISTOR
中文描述: 晶體管
文件頁數(shù): 1/4頁
文件大?。?/td> 193K
代理商: MMBTA42E
C
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
B E
1. BASE
2. EMITTER
3. COLLECTOR
E B
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBTA42E
TRANSISTOR
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
Power dissipation P
CM
: 0.15 W (Tamb=25
)
APPLICATION
High Voltage Amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1D
C
1D
B E
MAXIMUM RATINGS T
A
=25
unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
310
V
V
CEO
Collector-Emitter Voltage
305
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current -Continuous
300
mA
T
J
Junction Temperature
150
T
stg
Storage Temperature
-55-150
R
JA
Thermal Resistance, junction to Ambient
200
/W
/W
R
JC
Thermal Resistance, unction to Case
83.3
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
= 100
μ
A, I
E
=0
I
C
= 1mA, I
B
=0
I
E
= 100
μ
A, I
C
=0
V
CB
=200V, I
E
=0
V
CE
=200V, I
B
=0
V
CE
=300V, I
B
=0
V
EB
= 5V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=20mA, I
B
= 2mA
I
C
= 20mA, I
B
=2mA
V
CE
=20V, I
C
= 10mA
f=
30MHz
MIN
310
305
5
60
100
75
MAX
0.25
0.25
5
0.1
200
0.2
0.9
UNIT
V
V
V
μ
A
μ
A
μ
A
μ
A
V
V
Collector cut-off current
I
CEO
Emitter cut-off current
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE
(sat)
V
BE
(sat)
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
f
T
50
MHz
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