參數(shù)資料
型號(hào)： MMBTA28-13
廠商： DIODES INC
元件分類： 小信號(hào)晶體管
英文描述： 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 72K
代理商： MMBTA28-13
DS30367 Rev. 6 - 2
1 of 3
MMBTA28
www.diodes.com
Diodes Incorporated
MMBTA28
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
High Current Gain
Available in Lead Free/RoHS Compliant Version (Note 3)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
12
V
Collector Current - Continuous
IC
500
mA
Power Dissipation
Pd
300
mW
Thermal Resistance, Junction to Ambient
RqJA
417
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
C
B
E
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
Marking (See Page 2): K6R
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
Electrical Characteristics @ TA = 25°C unless otherwise specified
Notes:
1.
Device mounted on FR-4 PCB, 1.6x1.6x0.06 inch pad layout as shown on Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2.
Short duration test pulse used to minimize self-heating effect.
3.
No purposefully added lead.
T
C
U
D
O
R
P
W
E
N
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
C
B
E
Features
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
80
V
IC = 100
mAIE = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
12
V
IE = 100
mAIC = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
80
V
IC = 100
mAIB = 0
Collector Cutoff Current
ICBO
100
nA
VCB = 60V, IE = 0
ICES
500
nA
VCE = 10V
Emitter Cutoff Current
IEBO
100
nA
VEB = 10V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
10,000
IC = 10mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
1.5
V
IC = 100mA, IB = 100
mA
Base-Emitter Saturation Voltage
VBE(SAT)
2.0
V
IC = 100mA, VCE = 5.0V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8.0 Typical
pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
15 Typical
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
125
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
SPICE MODEL: MMBTA28
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