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參數(shù)資料
| 型號： | MMBTA13 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 25K |
| 代理商： | MMBTA13 |
MMBTA13 and MMBTA14
Vishay Semiconductors
formerly General Semiconductor
Document Number 88229
www.vishay.com
10-May-02
1
New Product
Darlington Transistors (NPN)
Mounting Pad Layout
Collector
Base
Emitter
Features
NPN Silicon Darlington Transistor for
switching and amplifier applications.
High collector current High current gain
These transistors are also available in the TO-92
case with the type designation MPSA13 & MPSA14
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCES
30
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
300
mA
225(1)
Power Dissipation at TA = 25°C
(3)
Ptot
300(2)
mW
556(1)
Thermal Resistance Junction to Ambient Air(3)
R
ΘJA
417(2)
°C/W
Maximum Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–55 to +150
°C
Notes:
(1) On FR-5 board
(2) On alumina substrate
(3) Valid provided that leads are kept at ambient temperature
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code:
1M for MMBTA13
1N for MMBTA14
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
相關PDF資料 |
PDF描述 |
|---|---|
| MMBTA14/E8 | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTA13/E9 | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTA14 | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTA14/E9 | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTA13/E8 | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBTA13 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR DARLINGTON SOT-23 |
| MMBTA13 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORS DARLINGTON BIPOLAR TRANSIST |
| MMBTA13_D87Z | 功能描述:達林頓晶體管 NPN Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA13-7 | 功能描述:達林頓晶體管 30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA13-7-F | 功能描述:達林頓晶體管 30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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