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參數(shù)資料
| 型號： | MMBTA13 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, DARLINGTON TRANSISTOR) |
| 中文描述： | 外延平面NPN晶體管（通用，達(dá)林頓晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 166K |
| 代理商： | MMBTA13 |
MMBTA13
MMBTA14
NPN Darlington
Amplifier Transistor
SOT-23
Suggested Solder
Pad Layout
.031
.800
Features
Operating And Storage Temperatures –55
O
C to 150
O
C
R
θ
JA
is 556
O
C/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”)
Capable of 225mWatts of Power Dissipation
Marking Code: MMBTA13 ----K2D; MMBTA14 ---- 1N
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
(I
C
=100uAdc, I
B
=0)
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emtter-Base Breakdown Voltage
I
C
Collector Current-Continuous
I
CBO
Collector Cutoff Current
(V
CB
=30Vdc, I
E
=0)
I
EBO
Emitter Cutoff Current
(V
EB
=10Vdc, I
C
=0)
ONCHARACTERISTICS
h
FE
DC Current Gain*
Min
Max
Units
30
Vdc
30
Vdc
10
300
Vdc
mAdc
100
nAdc
100
nAdc
MMBTA13
MMBTA14
MMBTA13
MMBTA14
V
CE(sat)
(I
C
=10mAdc, V
CE
=5.0Vdc)
(I
C
=150mAdc, V
CE
=1.0Vdc)
5000
10000
10000
20000
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=0.1mAdc)
Base-Emitter Saturation Voltage
(I
C
=100mAdc,V
CE
=5.0Vdc)
SMALL-SIGNAL CHARACTERISTICS
f
T
Current Gain-Bandwidth Product
(I
C
=10mAdc, V
CE
=5.0Vdc, f=100MHz)
1.5
Vdc
V
BE(sat)
2.0
Vdc
125
MHz
C
obo
Output Capacitance
(V
CB
=10Vdc, I
E
=0, f=1.0MHz)
8.0
pF
C
ibo
Input Capacitance
(V
BE
=0.5Vdc, I
C
=0, f=1.0MHz)
SWITCHING CHARACTERISTICS
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
15
pF
(V
CC
=30Vdc, V
BE
=0.5Vdc
I
C
=150mAdc, I
B1
=15mAdc)
(V
CC
=30Vdc, I
C
=150mAdc
I
B1
=I
B2
=15mAdc)
10
25
225
60
ns
ns
ns
ns
.2.000
inches
mm
.035
.900
.037
.950
.037
.950
K
A
B
C
D
E
F
G
H
J
Base
Collector
Emitter
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
www.
mc c semi
.c om
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBTA14 | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, DARLINGTON TRANSISTOR) |
| MMBTA13LT1 | Darlington Amplifier Transistors(NPN Silicon) |
| MMBTA14LT1 | Darlington Amplifier Transistors(NPN Silicon) |
| MMBTA13 | NPN SURFACE MOUNT DARLINGTON TRANSISTOR |
| MMBTA14 | Replaced by OPA4244 : Single-Supply Operational Amplifiers MicroAmplifier(TM) Series 16-SSOP/QSOP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBTA13 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR DARLINGTON SOT-23 |
| MMBTA13 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORS DARLINGTON BIPOLAR TRANSIST |
| MMBTA13_D87Z | 功能描述:達(dá)林頓晶體管 NPN Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA13-7 | 功能描述:達(dá)林頓晶體管 30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA13-7-F | 功能描述:達(dá)林頓晶體管 30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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