參數(shù)資料
型號: MMBTA06T/R7
元件分類: 小信號晶體管
英文描述: 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 1/5頁
文件大?。?/td> 1169K
代理商: MMBTA06T/R7
PAGE . 1
STAD-NOV.30.2005
MMBTA05,MMBTA06,MMBTA55,MMBTA56
NPN AND PNP HIGH VOLTAGE TRANSISTOR
VOLTAGE
60~80 Volts
225 mWatts
FEATURES
NPN and PNP silicon, planar design
Collector current I
C = 100mA
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
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相關(guān)PDF資料
PDF描述
MMBTA56 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MMBTA06 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBTA05 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBTA06/E9 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTA06/E8 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBTA06WT1 功能描述:兩極晶體管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTA06WT1G 功能描述:兩極晶體管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTA13 功能描述:達(dá)林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA13 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR DARLINGTON SOT-23
MMBTA13 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORS DARLINGTON BIPOLAR TRANSIST