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參數(shù)資料
| 型號(hào)： | MMBTA06 |
| 廠商： | RECTRON LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 186K |
| 代理商： | MMBTA06 |
FEATURES
MECHANICAL DATA
Case: Molded plastic
*
Epoxy: UL 94V-O rate flame retardant
*
Lead: MIL-STD-202E method 208C guaranteed
*
Mounting position: Any
*
* Weight: 0.008 gram
SOT-23
MMBTA06
2007-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Marking
Note: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
1GM
Collector
Collector - Base Breakdown Voltage (IC=100 uA, IE =0)
Emitter - Base Breakdown Voltage (IE= 100 uA, IC = 0)
- Emitter Breakdown Voltage(IC= 1mA, IB=0)
SYMBOL
MAX
MIN
TYP
80
4
-
1.2
MHz
200
0.1
100
V(BR)CBO
V(BR)CEO
VBE(sat)
V(BR)EBO
UNITS
V
uA
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
Dimensions in inches and (millimeters)
1
3
COLLECTOR
EMITTER
BASE
2
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.047(1.20)
0.055(1.40)
0.110(2.80)
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.071(1.80)
0.019(2.00)
0.089(2.25)
0.100(2.55)
0.012(0.30)
0.020(0.50)
0.000(0.00)
0.004(0.10)
0.035(0.90)
0.043(1.10)
0.003(0.08)
0.006(0.15)
ICBO
hFE
Collector Cut - Off Current (VCB= 80V, IE=0)
Collector Cut - Off Current (VEB= 3V, IC=0)
DC Current Gain(VCE= 1V, IC= 100mA)
Collector - Emitter Saturation Voltage(IC= 100 mA, IB= 10mA)
Base - Emitter Saturation Voltage(IC=100mA, IB= 10mA)
Transition Frequency(VCE= 2V, IC= 10mA, f =100MHz)
IEBO
CHARACTERISTICS
* Power dissipation
PCM :
0.3
W(Tamb=25OC)
* Collector current
ICM :
0.5
A
* Collector-base voltage
V(BR)CBO :
80
V
* Operating and storage junction temperature range
TJ,Tstg:
-55OC to +150OC
VCE(sat)
fT
-
0.25
-
0.1
Collector Cut - Off Current (VCE= 60V, IB=0)
ICEO
-
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBTA06_D87Z | 功能描述:兩極晶體管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA06_L98Z | 功能描述:兩極晶體管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA06_Q | 功能描述:兩極晶體管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA06-7 | 功能描述:兩極晶體管 - BJT 80V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA06-7-01-F | 制造商:DIODES 功能描述:TRANSISTOR NPN 80V / SOT-23 (LEAD FREE) |
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