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參數(shù)資料
| 型號： | MMBTA06 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 98K |
| 代理商： | MMBTA06 |
MCC
TM
Micro Commercial Components
www.mccsemi.com
2 of 2
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Aerospace or Military Applications.
Products offer by
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Revision:
6
200
7/10/11
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| MMBTA05 | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBTA06 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| MMBTA05 | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| MMBTA06 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBTA06 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBTA06_D87Z | 功能描述:兩極晶體管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA06_L98Z | 功能描述:兩極晶體管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA06_Q | 功能描述:兩極晶體管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA06-7 | 功能描述:兩極晶體管 - BJT 80V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA06-7-01-F | 制造商:DIODES 功能描述:TRANSISTOR NPN 80V / SOT-23 (LEAD FREE) |
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