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參數(shù)資料
| 型號： | MMBTA05 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 98K |
| 代理商： | MMBTA05 |
MCC
TM
Micro Commercial Components
www.mccsemi.com
2 of 2
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Aerospace or Military Applications.
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Revision:
6
200
7/10/11
相關(guān)PDF資料 |
PDF描述 |
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| MMBTA06 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| MMBTA05 | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| MMBTA06 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBTA06 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTA06/E8 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBTA05 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR, NPN, 60V SOT-23 |
| MMBTA05_Q | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA05-7 | 功能描述:兩極晶體管 - BJT 60V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA05-7-F | 功能描述:兩極晶體管 - BJT 60V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA05LT1 | 功能描述:兩極晶體管 - BJT 500mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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