參數(shù)資料
型號(hào): MMBTA05
廠(chǎng)商: LITE-ON SEMICONDUCTOR CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: GREEN, PLASTIC PACKAGE-3
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 213K
代理商: MMBTA05
MMBTA05
NPN General Purpose Transistor
FEATURES
For general AF applications
Low collector-emitter saturation voltage
MECHANICAL DATA
Case: SOT-23 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
4
V
Collector Current -Continuous
IC
0.5
A
Collector Power Dissipation
PC
300
mW
Junction Temperature
TJ
150
Storage Temperature Range
TSTG
-55~+150
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=100A,IE=0
VCBO
60
V
Collector-emitter breakdown voltage
IC=1mA,IB=0
VCEO
60
V
Emitter-base breakdown voltage
IE=100A,IC=0
VEBO
4
V
Collector-base cut-off current
VCB=60V,IE=0
ICBO
0.1
uA
Collector-emitter cut-off current
VCE=60V,IB=0
ICEO
0.1
uA
Emitter-base cut-off current
VEB=3V,IC=0
IEBO
0.1
uA
VCE=1V,IC=10mA
hFE1
100
400
V
DC current gain
VCE=1V,IC=100mA
hFE2
100
V
Collector-emitter saturation voltage
IC=100mA,IB=10mA
VCE(sat)
0.25
V
Base-emitter voltage
VCE=1V,IC=500mA
VBE
1.2
V
Transition frequency
VCE=2V,IC=10mA,
f=100MHz
fT
100
MHz
REV. 1, Oct-2010, KSNR14
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