參數(shù)資料
型號： MMBT4403
廠商： GE Security, Inc.
英文描述： Small Signal Transistors(PNP)(小信號晶體管（PNP）)
中文描述： 小信號晶體管（民進黨）（小信號晶體管（民進黨））
文件頁數(shù)： 2/3頁
文件大?。?/td> 116K
代理商： MMBT4403
MMBT4403
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at DI
C
= 0.1 mA, I
E
= 0
DV
(BR)CBO
40
D
Volts
Collector-Emitter Breakdown Voltage
(1)
at DI
C
= 1 mA, I
B
= 0
DV
(BR)CEO
40
D
Volts
Emitter-Base Breakdown Voltage
at DI
E
= 0.1 mA, I
C
= 0
DV
(BR)EBO
5.0
D
Volts
Collector-Emitter Saturation Voltage
(1)
at DI
C
= 150 mA, DI
B
= 15 mA
at DI
C
= 500 mA, DI
B
= 50 mA
DV
CEsat
DV
CEsat
D
D
0.40
0.75
Volts
Volts
Base-Emitter Saturation Voltage
(1)
at DI
C
= 150 mA, DI
B
= 15 mA
at DI
C
= 500 mA, DI
B
= 50 mA
DV
BEsat
DV
BEsat
0.75
D
0.95
1.30
Volts
Volts
Collector-Emitter Cutoff Current
at DV
EB
= 0.4 V, DV
CE
= 35 V
DI
CEX
D
100
nA
Emitter-Base Cutoff Current
at DV
EB
= 0.4 V, DV
CE
= 35 V
DI
BEV
D
100
nA
DC Current Gain
at DV
CE
= 1 V, DI
C
= 0.1 mA
at DV
CE
= 1 V, DI
C
= 1 mA
at DV
CE
= 1 V, DI
C
= 10 mA
at DV
CE
= 2 V, DI
C
= 150 mA
at DV
CE
= 2 V, DI
C
= 500 mA
h
FE
h
FE
h
FE
h
FE
h
FE
30
60
100
100
20
D
D
D
D
D
D
D
D
300
D
Input Impedance
at DV
CE
= 10 V, DI
C
= 1 mA, f = 1 kHz
h
ie
1.5
15
k
W
Current Gain-Bandwidth Product
at DV
CE
= 10 V, DI
C
= 20 mA, f = 100 MHz
f
T
200
D
MHz
Collector-Base Capacitance
at DV
CB
= 10 V, I
E
= 0, f = 1 MHz
C
CBO
D
8.5
pF
Emitter-Base Capacitance
at DV
EB
= 0.5 V, I
C
= 0, f = 1 MHz,
C
EBO
D
30
pF
NOTES:
(1) Pulse test: pulse width 2 300
m
duty cycle 2 2%
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT4403 制造商:Fairchild Semiconductor Corporation 功能描述:RF Bipolar Transistor 制造商:Vishay Semiconductors 功能描述:Small Signal Bipolar Transistor Transist
MMBT4403_D87Z 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4403_Q 功能描述:兩極晶體管 - BJT SOT-23 PNP GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4403-13 制造商:Diodes Incorporated 功能描述:N-CH MOSFET,SOT23,T&R,3K,100V,0.17A,6.0O, SMT - Tape and Reel 制造商:Zetex / Diodes Inc 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin SOT-23 T/R
MMBT4403-13-F 制造商:Zetex / Diodes Inc 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin SOT-23 T/R 制造商:Diodes Incorporated 功能描述:TRANS GP BJT PNP 40V 0.6A 3PIN SOT-23 - Tape and Reel
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