參數(shù)資料
型號(hào)： MMBT4401-13-F
廠商： DIODES INC
元件分類： 小信號(hào)晶體管
英文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, PLASTIC PACKAGE-3
文件頁數(shù)： 2/4頁
文件大?。?/td> 85K
代理商： MMBT4401-13-F
MMBT4401
Document number: DS30039 Rev. 13 - 2
2 of 4
December 2008
Diodes Incorporated
MMBT4401
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
60
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 100μA, IC = 0
Collector Cutoff Current
ICEX
100
nA
VCE = 35V, VEB(OFF) = 0.4V
Base Cutoff Current
IBL
100
nA
VCE = 35V, VEB(OFF) = 0.4V
ON CHARACTERISTICS (Note 4)
DC Current Gain
hFE
20
40
80
100
40
300
IC = 100A, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.40
0.75
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.75
0.95
1.2
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Ccb
6.5
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb
30
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
15
k
Ω
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
hre
0.1
8.0
x 10
-4
Small Signal Current Gain
hfe
40
500
Output Admittance
hoe
1.0
30
μS
Current Gain-Bandwidth Product
fT
250
MHz
VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
td
15
ns
VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA
Rise Time
tr
20
ns
Storage Time
ts
225
ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Fall Time
tf
30
ns
Notes:
4. Short duration pulse test used to minimize self-heating effect.
0
50
100
25
50
75
100
125
150
175
200
P
,
P
O
WE
R
D
ISSI
P
A
T
IO
N
(
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
A
150
200
250
300
350
0
400
R
= 417 C/W
θJA
°
0.1
1
10
100
V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
0.001
0.01
0.1
1
I,
C
O
LL
E
C
T
O
R
C
U
R
EN
T
(A
)
C
T = 25°C
A
Single Non-repetitive Pulse
DUT mounted onto 1xMRP
FR-4 board
DC
Pw = 100ms
Pw = 10ms
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT4401-7 功能描述:兩極晶體管 - BJT 40V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4401-7-F 功能描述:兩極晶體管 - BJT 40V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT4401-7-F-31 制造商:DIODES 功能描述:NPN TRANSISTORS/SOT-23(LEAD FREE)
MMBT4401FSTRND 制造商: 功能描述: 制造商:undefined 功能描述:
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