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參數(shù)資料
| 型號： | MMBT3904G-AL3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 116K |
| 代理商： | MMBT3904G-AL3-R |
MMBT3904
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-012.D
ABSOLUTE MAXIMUM RATING ( Ta=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
200
mA
Collector Dissipation
PC
350
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-base breakdown voltage
VCBO
IC=10μA, IE=0
60
V
Collector-emitter breakdown voltage (note)
VCEO
IC=1mA, IB=0
40
V
Emitter-base breakdown voltage
VEBO
IE=10μA, IC=0
6
V
VCE(SAT)1IC=10mA, IB=1mA
0.2
V
Collector-emitter saturation voltage (note)
VCE(SAT)2IC=50mA, IB=5mA
0.3
V
VBE(SAT)1IC=10mA, IB=1mA
0.65
0.85
V
Base-emitter saturation voltage (note)
VBE(SAT)2IC=50mA, IB=5mA
0.95
V
Collector Cut-off Current
ICEX
VCE=30V, VEB=3V
50
nA
Base Cut-off Current
IBL
VCE=30V, VEB=3V
50
nA
hFE1
VCE=1V, IC=0.1mA
40
hFE2
VCE=1V, IC=1mA
70
hFE3
VCE=1V, IC=10mA
100
300
hFE4
VCE=1V, IC=50mA
60
DC current gain (note)
hFE5
VCE=1V, IC=100mA
30
Current gain bandwidth product
fT
VCE=20V, IC=10mA, f=100MHz
300
MHz
Output Capacitance
Cob
VCB=5V, IE=0, f=1MHz
4
pF
Turn on time
tON
VCC=3V,
VBE=0.5V,
IC=10mA,
IB1=1mA
70
ns
Turn off time
tOFF
IB1=1B2=1mA
250
ns
Note: Pulse test: PW<=300
μs, Duty Cycle<=2%
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相關代理商/技術參數(shù) |
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