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參數(shù)資料
| 型號： | MMBT3904 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 0K |
| 代理商： | MMBT3904 |
MMBT3904
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Emitter saturation voltage – Kollektor-Sttigungsspannung 2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
–
0.2 V
0.3 V
Base-Emitter saturation voltage – Basis-Sttigungsspannung 2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VBEsat
0.65 V
–
0.85 V
0.95 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCE = 30 V, VEB = 3 V
ICBX
–
50 nA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VCE = 30 V, - VEB = 3 V
IEBV
–
–-
50 nA
Gain-Bandwidth Product – Transitfrequenz
IC = 10 mA, VCE = 20 V, f = 100 MHz
fT
300 MHz
–
Collector-Base Capacitance – Kollektor-Basis-Kapazitt
VCB = 5 V, IE = ie = 0, f = 1 MHz
CCBO
–
4 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazitt
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEBO
–
8 pf
Noise figure – Rauschzahl
VCE = 5 V, IC = 1 A, RG = 1 kΩ, f = 1 kHz
F
–
5 dB
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
VCC = 3 V, VBE = 0.5 V
IC = 10 mA, IB1 = 1mA
td
–
35 ns
tr
–
35 ns
storage time
fall time
VCC = 3 V, IC = 10 mA,
IB1 = IB2 = 1 mA
ts
–
200 ns
tf
–
50 ns
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht – umgebende Luft
RthA
< 357 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementre PNP-Transistoren
MMBT3906
Marking - Stempelung
MMBT3904 = 1AM or 1E
2
Tested with pulses tp = 300 s, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 s, Schaltverhltnis ≤ 2%
1
Valid, if leads are kept at ambient temperature
Gültig, wenn die Anschlüsse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
Diotec Semiconductor AG
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