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參數(shù)資料
| 型號： | MMBT3904 |
| 廠商： | GENERAL SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 89K |
| 代理商： | MMBT3904 |
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VCE = 1 V, IC = 0.1 mA
40
——
VCE = 1 V, IC = 1 mA
70
——
DC Current Gain
hFE
VCE = 1 V, IC = 10 mA
100
—
300
—
VCE = 1 V, IC = 50 mA
60
——
VCE = 1 V, IC = 100 mA
30
——
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 10
A, IE = 0
60
——
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 1 mA, IB = 0
40
——
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10
A, IC = 0
6.0
——
V
Collector Saturation Voltage
VCEsat
IC = 10 mA, IB = 1 mA
——
0.2
V
IC = 50 mA, IB = 5 mA
——
0.3
Base Saturation Voltage
VBEsat
IC = 10 mA, IB = 1 mA
——
0.85
V
IC = 50 mA, IB = 5 mA
——
0.95
Collector-Emitter Cut-off Current
ICEV
VEB = 3 V, VCE = 30 V
——
50
nA
Emitter-Base Cut-off Current
IEBV
VEB = 3 V, VCE = 30 V
——
50
nA
Gain-Bandwidth Product
fT
VCE = 20 V, IC = 10 mA
300
——
MHz
f = 100 MHz
Collector-Base Capacitance
CCBO
VCB = 5 V, f = 100 kHz
——
4pF
Emitter-Base Capacitance
CEBO
VEB = 0.5 V, f = 100 kHz
——
8pF
0.59 (15)
0.2 (5)
0.03 (0.8)
0.30 (7.5)
0.12 (3)
.04 (1)
0.06 (1.5)
0.20 (5.1)
.08 (2)
.04 (1)
0.47 (12)
Dimensions in inches and
(millimeters)
MMBT3904
Small Signal Transistor (NPN)
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| MMBT3904 _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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| MMBT3904,215 | 功能描述:兩極晶體管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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