參數(shù)資料
型號(hào)： MMBT3640L99Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 95K
代理商： MMBT3640L99Z
PN3640
/
MMBT3640
PNP Switching Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 10 mA, IB = 012V
V(BR)CES
Collector-Emitter Breakdown Voltage
IC = 100
A, V
BE = 0
12
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, IE = 0
12
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100
A, I
C = 0
4.0
V
ICES
Collector Cutoff Current
VCE = 6.0 V, VBE = 0
VCE = 6.0 V, VBE = 0, TA = 65
°C
0.01
1.0
A
IB
Base Current
VCE = 6.0 V, VBE = 0
10
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 10 mA, VCE = 0.3 V
IC = 50 mA, VCE = 1.0 V
30
20
120
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 0.5 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC= 10 mA, IB= 1.0 mA,TA =65
°C
0.3
0.2
0.6
0.25
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 0.5 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.75
0.8
0.95
1.0
1.5
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
500
MHz
Cobo
Output Capacitance
VCB = 5.0 V, IE = 0,
f = 1.0 MHz
3.5
pF
Cibo
Input Capacitance
VBE = 0.5 V, IC = 0,
f = 1.0 MHz
3.5
pF
SWITCHING CHARACTERISTICS
td
Delay Time
VCC = 6.0 V, VBE(off) = 1.9 V,
10
ns
tr
Rise Time
IC = 50 mA, IB1 = 5.0 mA
20
ns
ts
Storage Time
VCC = 6.0 V, IC = 50 mA,
20
ns
tf
Fall Time
IB1 = IB2 = 5.0 mA
12
ns
ton
Turn-On Time
VCC = 6.0 V, VBE(off) = 1.9 V,
25
ns
IC = 50 mA, IB1 = 5.0 mA
VCC = 1.5 V, IC = 10 mA,
60
ns
IB1 = IB2 = 0.5 mA
toff
Turn-Off Time
VCC = 6.0 V, VBE(off) = 1.9 V,
35
ns
IC = 50 mA, IB1 = 5.0 mA
VCC = 1.5 V, IC = 10 mA,
75
ns
IB1 = IB2 = 0.5 mA
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
相關(guān)PDF資料
PDF描述
MMBT3640LT1 80 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT3640LT3 80 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MMBT3640S62Z PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT3640L99Z PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT3640LT1 制造商:Motorola Inc 功能描述:
MMBT3645 制造商:Texas Instruments 功能描述:
MMBT3646 功能描述:兩極晶體管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT3646_Q 功能描述:兩極晶體管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT3702 功能描述:兩極晶體管 - BJT PNP/ 25V/ 800mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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