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參數(shù)資料
| 型號： | MMBT2907AWT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-04, SC-70, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 115K |
| 代理商： | MMBT2907AWT3 |
MMBT2907AWT1
http://onsemi.com
568
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain (1)
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = –500 mAdc, VCE = –10 Vdc)
HFE
75
100
50
—
Collector–Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
—
–0.4
–1.6
Vdc
Base–Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat)
—
–1.3
–2.6
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –50 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
200
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
30
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(V
30 Vd
ton
—
45
Delay Time
(VCC = –30 Vdc,
IC = –150 mAdc, IB1 = –15 mAdc)
td
—
10
Rise Time
IC = –150 mAdc, IB1 = –15 mAdc)
tr
—
40
ns
Storage Time
(V
60Vd
I
150
Ad
ts
—
80
ns
Fall Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = 15 mAdc)
tf
—
30
Turn–Off Time
IB1 = IB2 = 15 mAdc)
toff
—
100
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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