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參數(shù)資料
| 型號： | MMBT2907A |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Transistors(PNP)(小信號晶體管（PNP）) |
| 中文描述： | 小信號晶體管（民進(jìn)黨）（小信號晶體管（民進(jìn)黨）） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 102K |
| 代理商： | MMBT2907A |
MMBT2907A
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at DI
C
= 10
m
A, I
E
= 0
DV
(BR)CBO
60
D
Volts
Collector-Emitter Breakdown Voltage
at DI
C
= 1 mA, I
B
= 0
DV
(BR)CEO
60
D
Volts
Emitter-Base Breakdown Voltage
at DI
E
= 10
m
A, I
C
= 0
DV
(BR)EBO
5.0
D
Volts
Collector-Emitter Saturation Voltage
at DI
C
= 150 mA, DI
B
= 15 mA
at DI
C
= 500 mA, DI
B
= 50 mA
DV
CEsat
DV
CEsat
D
D
0.4
1.6
Volts
Volts
Base-Emitter Saturation Voltage
at DI
C
= 150 mA, DI
B
= 15 mA
at DI
C
= 500 mA, DI
B
= 50 mA
DV
BEsat
DV
BEsat
D
D
1.3
2.6
Volts
Volts
Collector Cutoff Current
at DV
EB
= 0.5 V, DV
CE
= 30 V
DI
CEX
D
50
nA
Collector Cutoff Current
at DV
CB
= 50, I
E
= 0
at DV
CB
= 50, I
E
= 0, T
A
= 125
°
C
DI
CBO
m
A
D
D
0.01
10
Emitter-Base Cutoff Current
at DV
EB
= 0.5 V, DV
CE
= 30 V
DI
BL
D
50
nA
DC Current Gain
at DV
CE
= 10 V, DI
C
= 0.1 mA
at DV
CE
= 10 V, DI
C
= 1 mA
at DV
CE
= 10 V, DI
C
= 10 mA
at DV
CE
= 10 V, DI
C
= 150 mA
at DV
CE
= 10 V, DI
C
= 500 mA
h
FE
h
FE
h
FE
h
FE
h
FE
75
100
100
100
50
D
D
D
D
D
D
D
D
300
D
Input Impedance
at DV
CE
= 10 V, DI
C
= 1 mA, f = 1 kHz
h
ie
1
10
k
W
Gain-Bandwidth Product
at DV
CE
= 20 V, DI
C
= 50 mA, f = 100 MHz
f
T
200
D
MHz
Output Capacitance
at DV
CB
= 10 V, f = 1.0 MHz
C
obo
D
8
pF
Input Capacitance
at DV
EB
= 2.0 V, f = 1.0 MHz
C
ibo
D
30
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2907A MCC | 制造商:MCC 功能描述:General Purpose PNP SM TRANS SOT-23 制造商:MCC 功能描述:General Purpose PNP SM TRANS SOT-23 - free partial T/R at 500. |
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| MMBT2907A_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER |
| MMBT2907A_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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