參數(shù)資料
型號： MMBT2484S62Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： 100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù)： 1/2頁
文件大?。?/td> 40K
代理商： MMBT2484S62Z
PN2484
/
MMBT2484
PN2484
MMBT2484
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1
to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
100
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
PN2484
*MMBT2484
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
C
B
E
TO-92
SOT-23
Mark: 1U
C
B
E
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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