參數(shù)資料
型號(hào): MMBT2369AS62Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 187K
代理商: MMBT2369AS62Z
PN2369A
/
MMBT2369A
/
MMPQ2369
AC Typical Characteristics
Output Capacitances vs.
Reverse Bias Voltage
Switching Times
vs. Collector Current
Storage Time vs. Turn On
and Turn Off Base Currents
Switching Times vs.
Ambient Temperature
Storage Time vs. Turn On
and Turn Off Base Currents
Storage Time vs. Turn On
and Turn Off Base Currents
NPN Switching Transistor
(continued)
相關(guān)PDF資料
PDF描述
MMBT2369ALT3 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2369LT3 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2369AT/R13 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT2369AT/R7 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT2369L 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT2369-G 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS
MMBT2369L 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Switcing Transistors
MMBT2369LT1 功能描述:兩極晶體管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2369LT1_07 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Switching Transistors NPN Silicon
MMBT2369LT1G 功能描述:兩極晶體管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2