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參數(shù)資料
| 型號： | MMBT2222AWT/R13 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 123K |
| 代理商： | MMBT2222AWT/R13 |
PAGE . 2
May 13.2010-REV.00
MMBT2222AW
PA RA M E TE R
S ym b o l
Te s t Co nd itio n
M IN.
TYP.
M A X .
Units
C o lle c t or - E m i t te r B r eak down Vo lt age
V (B R)CE O
IC =1 .0 m A , IB =0
4 0
-
V
C o lle c t or - B a s e B r eak down Vo lt age
V (B R)CB O
IC = 10uA , IE =0
7 5
-
V
E m i tt e r - B a s e B r eak down Vo ltage
V (B R)EBO
IE = 10uA , IC =0
6 .0
-
V
Ba se C ut o ff Cur r e nt
IBL
V CE = 60V, V EB =3 .0 V
-
2 0
nA
Co lle c t o r Cuto f f Cur r e nt
ICE X
V CE = 60V, V EB =3 .0 V
-
1 0
nA
ICB O
V CE = 60V, IE =0 ,
V CE = 60V, IE =0 ,TJ = 125 OC
--
10
nA
uA
E m i tte r C uto ff C ur r e nt
IEB O
V EB =3 .0 V, IC =0 ,
-
1 0 0
nA
DC C ur r e nt G a i n
h
FE
IC =0 .1 m A , V CE = 10V
IC =1 .0 m A , V CE = 10V
IC = 10m A , V CE = 10V
IC = 10m A , V CE = 10V,TJ = 125 OC
IC = 150m A , V CE = 10V ( Not e 2)
IC = 150m A , V CE = 1 V
( Note 2)
IC = 500m A , V CE = 10V
( Note 2)
35
50
75
35
100
50
40
-
300
-
C o lle c t or - E m i t te r S a t ur a t i on Vo lt age
( Note 2)
V CE (SAT)
IC = 150m A , IB = 15m A
IC = 500m A , IB = 50m A
--
0. 3
1. 0
V
Ba se - Em it t e r Sa tur a t i o n Vo lta g e
( Note 2)
V BE(S AT)
IC = 150m A , IB = 15m A
IC = 500m A , IB = 50m A
0.6
-
1. 2
2. 0
V
C o lle c t or - B a s e C apac i t anc e
C CB O
V CB = 10V, IE =0 , f=1 M Hz
-
8 . 0
p F
E m i tt e r - B a s e C apaci t anc e
C EBO
V CB =0 .5 V, IC = 0 , f= 1M Hz
-
25
pF
De la y Ti m e
t d
V CC =3 V, V BE =- 5 V,
IC = 150m A , IB = 15m A
--
1 0
ns
Ri s e Ti m e
tr
V CC =3 V, V BE =- 5 V,
IC = 150m A , IB = 15m A
--
2 5
ns
S t or age Ti m e
t s
V CC = 30V,IC = 150m A
IB 1= IB 2= 15m A
-
225
ns
F a ll Ti m e
tf
V CC = 30V,IC = 150m A
IB 1= IB 2= 15m A
--
6 0
ns
ELECTRICAL CHARACTERISTICS
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
200
W
1K
W
0
-2 V
1.0to1 00u s
Duty Cycle ~ 2.0%
+16V
+30 V
Fig. 1 T urn-On T i me
Fig. 2 T urn-Off T ime
< 2ns
C * < 10pF
S
* Total shunt capacitance o f t est jig, connectors, and oscilloscope
Scope rise time < 4ns
0
-14 V
1.0 to 100us
Duty Cycle ~ 2.0%
+16V
< 20ns
-4V
0
1N914
+30V
200
W
1K
W
C *<10pF
S
SWITCHING TIME EQUIVALENT TEST CIRCUITS
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| MMBT2222LT1 | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| MMBT2222LT1_01 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors NPN Silicon |
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