參數(shù)資料
型號: MMBT2222AW
元件分類: 小信號晶體管
英文描述: 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 4/4頁
文件大?。?/td> 97K
代理商: MMBT2222AW
PAGE . 4
STAD-JUL.06.2004
MOUNTING PAD LAYOUT
Packing information
T/R - 12K per 13" plastic Reel
T/R - 3.0K per 7" plastic Reel
ORDER INFORMATION
LEGAL STATEMENT
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation
of the device in the application. The information will help the customer's technical experts determine that the device is
compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed
to be reliable and accurate. The specifications and information herein are subject to change without notice. New products
and improvements in products and product characterization are constantly in process. Therefore, the factory should be
consulted for the most recent information and for any special characteristics not described or specified.
Copyright Pan Jit International Inc. 2003
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner.
The information presented in this document does not form part of any quotation or contract. The information presented is
believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the
publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
0.035(0.9)
0.075(1.9)
0.025(0.65)
0.028(0.7)
SOT-323
Unit: inch (mm)
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MMBT2222A 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT2222AW_10 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:NPN GENERAL PURPOSE SWITCHING TRANSISTOR
MMBT2222AWT1 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2222AWT1_10 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor
MMBT2222AWT1G 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2222AWT1GOSDKR-ND 制造商: 功能描述: 制造商:undefined 功能描述: