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參數(shù)資料
| 型號(hào)： | MMBT2222AL99Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 113K |
| 代理商： | MMBT2222AL99Z |
PN2222A
/
MMBT2222A
/
MMPQ2222
/
NMT2222
/
PZT2222A
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN2222A
*PZT2222A
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
125
°C/W
Symbol
Characteristic
Max
Units
**MMBT2222A
MMPQ2222
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
1,000
8.0
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
357
125
240
°C/W
Typical Characteristics
NPN General Purpose Amplifier
(continued)
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
25
0.2
0.4
0.6
0.8
1
I
- COLLECTOR CURRENT (mA)
V
-
BA
SE-
EMI
TTER
ON
VOL
T
A
GE
(
V
)
BE
(O
N)
C
V
= 5V
CE
25 °C
125 °C
- 40 °C
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0.4
0.6
0.8
1
I
- COLLECTOR CURRENT (mA)
V
-
BA
SE-EM
IT
TER
V
O
L
T
A
G
E
(V)
BE
SA
T
C
β = 10
25 °C
125 °C
- 40 °C
Collector-Emitter Saturation
Voltage vs Collector Current
110
100
500
0.1
0.2
0.3
0.4
I
- COLLECTOR CURRENT (mA)
V
-COLL
ECT
O
R
-EMI
T
TER
VOL
T
A
G
E
(V
)
CES
A
T
25 °C
C
β = 10
125 °C
- 40 °C
Typical Pulsed Current Gain
vs Collector Current
0.1
0.3
1
3
10
30
100
300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
TYPI
C
A
L
P
U
LS
ED
CU
RRENT
GA
IN
C
FE
125 °C
25 °C
- 40 °C
V
= 5V
CE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2222AL-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| MMBT2222AL-AL3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| MMBT2222AL-AN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| MMBT2222ALP4-7B | 功能描述:MOSFET General Purpose Tran X2-DFN1006-3 T&R 10K RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMBT2222ALT | 制造商:Motorola Inc 功能描述: |
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