參數(shù)資料
型號: MMBT2222A/E9
廠商: VISHAY SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 1/3頁
文件大小: 34K
代理商: MMBT2222A/E9
MMBT2222A
Vishay Semiconductors
formerly General Semiconductor
Document Number 88222
www.vishay.com
10-May-02
1
New Product
Small Signal Transistor (NPN)
Features
NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
This transistor is also available in the TO-92 case
with the type designation MPS2222A.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
600
mA
Power Dissipation
on FR-5 Board(1) TA = 25°C
Ptot
225
mW
Derate above 25°C
1.8
mW/°C
Power Dissipation
on Alumina Substrate(2) TA = 25°C
Ptot
300
mW
Derate above 25°C
2.4
mW/°C
Thermal Resistance Junction
FR-5 Board
R
ΘJA
556
°C/W
to Ambient Air
Alumina Substrate
417
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–55 to +150
°C
Notes: (1) FR-5 = 1.0 x 0.75 x 0.062 in.
(2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 1P
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
相關(guān)PDF資料
PDF描述
MMBT2222A/E8 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2222A 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2222A-GS18 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT2222A-GS08 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT2222ALT1-TP 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT2222AF065 制造商:Fairchild Semiconductor Corporation 功能描述:Trans GP BJT NPN 40V 1A 3-Pin SOT-23 T/R
MMBT2222A-G 功能描述:射頻雙極電源晶體管 VCEO=40V IC=600mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray
MMBT2222AG-AE3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER
MMBT2222AG-AL3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER
MMBT2222AG-AN3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER