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參數(shù)資料
| 型號(hào)： | MMBT1815 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 167K |
| 代理商： | MMBT1815 |
ELECTRICAL CHARACTERISTICS Ta= 25°C Unless Otherwise Specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector cut-off current
ICBO
VCB=60V,IE=0
100
nA
Emitter cut-off current
IEBO
VEB=5V,Ic=0
100
nA
DC current gain(note)
hFE1
VCE=6V,Ic=2mA
13
0
4
00
Collector-emitter saturation voltage
VCE(sat)
Ic=100mA,IB=10mA
0.1
0.25
V
Base-emitter saturation voltage
VBE(sat)
Ic=100mA,IB=10mA
1.0
V
Current gain bandwidth product
fT
VCE=10V,Ic=1.0mA,f=30Hz.........80
....
MHz
Output capacitance
Cob
VCB=10V,IE=0,f=1MHz
2.0
3.0
pF
Noise Figure
NF
Ic=-0.1mA,VCE=6V
RG=10k
,f=100Hz
1.0
dB
CLASSIFICATION OF hFE1
RANK
L
H
RANGE
130-200
200-400
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
Ic,Co
lle
cto
rcu
rr
e
n
t
(
m
A
)
04
8
12
16
20
0
20
40
60
80
100
Fig.2 DC current Gain
Ic,Collector current (mA)
H
FE
,DC
cu
rr
e
n
tG
a
in
10
2
10
1
10
0
10
3
10
3
10
2
10
1
10
0
10
-1
VCE=6V
Fig.3 Base-Emitter on Voltage
10
-1
10
0
10
1
10
2
Ic,Co
lle
cto
rcu
rr
e
n
t
(
m
A
)
Base-Emitter voltage (V)
0
0.2
0.4
0.6
0.8
1.0
VCE=6V
Ic,Collector current (mA)
10
3
10
2
10
1
10
0
10
-1
Sat
u
rat
ion
v
o
ltage
(m
V)
10
1
10
2
10
3
10
4
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
VCE(sat)
VBE(sat)
Ic=10*IB
Ic,Collector current (mA)
10
0
10
1
10
2
10
3
C
u
rrent
Gain-bandw
idt
h
produc
t,
fT
(M
H
z)
10
0
10
1
10
2
VCE=6V
Collector-Base voltage (V)
C
ob,
C
apac
itanc
e
(pF
)
10
0
10
1
10
2
10
0
10
1
10
2
10
3
f=1MHz
IE=0
IB=50
A
IB=100
A
IB=150
A
IB=200
A
IB=250
A
IB=300
A
10
-1
10
-1
MCC
www.mccsemi.com
Revision: 2
2003/04/30
MMBT1815
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| MMBT1815-BL-AE3-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR |
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